2sa1419 / 2sc3649 no.2007-1/7 features ? adoption of fbet, mbit processes ? high breakdown voltage and large current capacity ? ultrasmall size making it easy to provide high-density, small-sized hybrid ic?s speci cations ( ) : 2sa1419 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)180 v collector-to-emitter voltage v ceo (--)160 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)1.5 a collector current (pulse) i cp (--)2.5 a collector dissipation p c 500 mw when mounted on ceramic substrate (250mm 2 0.8mm) 1.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7007b-004 ordering number : EN2007C 82212 tkim/31010cb tkim/o3103tn (kt)/71598ha (kt)/4277ta, ts sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collector 3 : emitter sanyo : pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2sa1419s-td-e 2sa1419s-td-h 2sa1419t-td-e 2sa1419t-td-h 2sc3649s-td-e 2sc3649s-td-h 2sc3649t-td-e 2sc3649t-td-h ae lot no. ce lot no. 2sc3649 2sa1419 rank rank 2 3 1 2sc3649 2 3 1 2sa1419 2sa1419/2sc3649 pnp / npn epitaxial planar silicon transistor high-voltage switching applications
2sa1419 / 2sc3649 no.2007-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)120v, i e =0a (--)1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)1 a dc current gain h fe 1v ce =(--)5v, i c =(--)100ma 100* 400* h fe 2v ce =(--)5v, i c =(--)10ma 80 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 120 mhz output capacitance cob v cb =(--)10v, f=1mhz (22)14 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)500ma, i b =(--)50ma (--200)130 (--500)450 mv base-to-emitter saturation voltage v be (sat) i c =(--)500ma, i b =(--)50ma (--)0.85 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)180 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)160 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (40)40 ns storage time t stg (0.7)1.2 s fall time t f (40)80 ns * : the 2sa1419 / 2sc3649 are classi ed by 100ma h fe as follows : rank r s t h fe 100 to 200 140 to 280 200 to 400 switching time test circuit ordering information device package shipping memo 2sa1419s-td-e pcp 1,000pcs./reel pb free 2sa1419s-td-h pcp 1,000pcs./reel pb free and halogen free 2sa1419t-td-e pcp 1,000pcs./reel pb free 2sa1419t-td-h pcp 1,000pcs./reel pb free and halogen free 2sc3649s-td-e pcp 1,000pcs./reel pb free 2sc3649s-td-h pcp 1,000pcs./reel pb free and halogen free 2sc3649t-td-e pcp 1,000pcs./reel pb free 2sc3649t-td-h pcp 1,000pcs./reel pb free and halogen free input 100v 50 r l 100 f 470 f --5v i c =10i b1 =--10i b2 =0.7a (for pnp, the polarity is reversed) + + v r pw=20 s d.c. 1% r b i b1 i b2
2sa1419 / 2sc3649 no.2007-3/7 i c -- v ce i c -- v ce i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a h fe -- i c h fe -- i c collector current, i c -- a dc current gain, h fe collector current, i c -- a dc current gain, h fe i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a itr03571 0--2 -- 1 -- 4 --3 --5 2 14 35 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 0 --0.2 --0.6 --0.4 --0.8 --1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 0.2 0.6 0.4 0.8 1.0 0 itr03572 10 20 30 40 50 0 itr03574 itr03573 -- 40 -- 30 -- 50 -- 10 -- 20 0 --40ma --60ma --80ma --20ma --10ma --5ma --2ma --1ma i b =0ma 2sa1419 2sc3649 2sc3649 i b =0ma i b =0ma 2sa1419 20ma 50ma 30ma 40ma 10ma 5ma 2ma 1ma --2.5ma --2.0ma --3.0ma --3.5ma --5.0ma --4.0ma --4.5ma --1.5ma --1.0ma --0.5ma i b =0ma 0.5ma 5.0ma 4.5ma 2.5ma 3.5ma 4.0ma 2.0ma 3.0ma 1.5ma 1.0ma itr03578 itr03577 itr03575 -- 5 -- 7 -- 5 -- 7 -- 3 -- 2 -- 5 -- 7 -- 3 -- 2 -- 3 -- 2 -- 0.01 -- 0.1 -- 1.0 -- 0.4 0 -- 0.8 -- 1.6 -- 1.2 0.4 0 0.8 1.6 1.2 10 100 1000 5 7 3 2 5 7 3 2 57 73 2 0.01 0.1 57 3 23 2 1.0 10 100 1000 5 7 3 2 5 7 3 2 -- 0.6 -- 0.8 0 -- 0.4 -- 0.2 -- 1.0 -- 1.2 0.6 0.8 0 0.4 0.2 1.0 1.2 itr03576 2sa1419 v ce =--5v 2sc3649 v ce =5v 2sa1419 v ce =--5v 2sc3649 v ce =5v --25 c 25 c ta=75 c --25 c 25 c ta=75 c --25 c 25 c ta=75 c --25 c 25 c ta=75 c
2sa1419 / 2sc3649 no.2007-4/7 f t -- i c cob -- v cb collector current, i c -- a gain-bandwidth product, f t -- mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf a s o p c -- ta collector current, i c -- a collector-to-emitter voltage, v ce -- v collector dissipation, p c -- w ambient temperature, ta -- c v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv v be (sat) -- i c v be (sat) -- i c collector current, i c -- a collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v itr03580 itr03579 2 0.01 57 3 0.1 22 57 3 1.0 2 -- 0.01 -- 0.1 57 73 2 -- 1.0 57 323 2 0.01 0.1 57 73 2 1.0 57 323 100 10 2 3 5 7 2 3 5 2 1.0 57 3 10 257 3 100 10 100 2 3 5 7 3 5 7 -- 1000 -- 100 2 3 5 7 2 3 2 3 5 7 itr03581 2 5 7 1000 2 3 5 7 100 3 2 3 itr03582 2sc3649 i c / i b =10 2sa1419 i c / i b =10 --25 c 25 c ta=75 c --25 c 25 c ta=75 c 2sa1419 2sc3649 2sa1419 2sc3649 2sa1419 / 2sc3649 2sa1419 / 2sc3649 itr03583 -- 1.0 -- 10 3 5 7 3 5 7 2 0.01 3 0.1 5 7 5 7 2 3 1.0 5 5 7 2 3 2 7 -- 0.01 -- 0.1 57 3 2 -- 1.0 57 3 23 27 0.01 0.1 57 3 2 1.0 57 3 23 2 1.0 73 2 1.0 10 5 3 7 2 5 3 7 0 0.2 0.4 0.6 0.8 1.8 1.6 1.4 1.2 1.0 0 20 80 100 60 40 160 140 120 itr03584 itr03585 mounted on a ceramic board (250mm 2 ? 0.8mm) no heat sink 7 10 53 23 2 7 100 5 itr03586 1ms 10ms 100ms dc operation for pnp, minus sign is omitted single pulse ta=25 c mounted on a ceramic board (250mm 2 ? 0.8mm) 2sa1419 i c / i b =10 2sc3649 i c / i b =10 25 c 75 c ta=--25 c 25 c 75 c ta=--25 c 2sa1419 / 2sc3649 2sa1419 / 2sc3649 i cp =2.5a i c =1.5a for pnp, minus sign is omitted for pnp, minus sign is omitted
2sa1419 / 2sc3649 no.2007-5/7 bag packing speci cation 2sa1419s-td-e, 2sa1419s-td-h, 2sa1419t-td-e, 2sa1419t-td-h, 2sc3649s-td-e, 2sc3649s-td-h, 2sc3649t-td-e, 2sc3649t-td-h
2sa1419 / 2sc3649 no.2007-6/7 outline drawing land pattern example 2sa1419s-td-e, 2sa1419s-td-h, 2sa1419t-td-e, 2sa1419t-td-h, 2sc3649s-td-e, 2sc3649s-td-h, 2sc3649t-td-e, 2sc3649t-td-h mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
2sa1419 / 2sc3649 ps no.2007-7/7 this catalog provides information as of august, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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